Patent · US Active

Semiconductor device

US10930665B2 · kind B2 · utility

4Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 2019
Grant dateFeb 23, 2021
Priority date
Expiry dateAug 9, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/40
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.