Image sensor including a shield structure
US10930685B2 · kind B2 · utility
1Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Apr 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is an image sensor comprising a first substrate including a plurality of pixels, a photoelectric conversion region in the first substrate at each of the pixels, a first capacitor on the first substrate, and a shield structure spaced apart from and surrounding the first capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.