Light emitting chip and fabrication method thereof
US10930831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Jan 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.