Systems and methods utilizing serial and parallel configurations of magnetic memory devices
US10937478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Jul 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a second MTJ having a second magnetic characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first MTJ. The second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second MTJ, The apparatus further includes a metallic separator coupling the first MTJ with the second MTJ, wherein the first MTJ and the second MTJ are arranged in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.