Method for processing workpiece
US10937660B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.