Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof
US10937809B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Aug 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B51/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional ferroelectric memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, where each of the electrically conductive layers contains a respective transition metal nitride liner and a respective conductive fill material layer, a vertical semiconductor channel vertically extending through the alternating stack, a vertical stack of transition metal nitride spacers laterally surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers, and discrete ferroelectric material portions laterally surrounding the respective transition metal nitride spacers and located at the levels of the electrically conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.