Method for manufacturing semiconductor and structure thereof
US10937858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2020 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Apr 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor structure is provided. The method includes: providing a substrate including an electrical component; forming a capacitor structure in the substrate, proximal to a heterogeneous interface of the substrate, and physically and electrically isolated from the electrical component; forming a conductive terminal over and electrically connected with the capacitor structure; and contacting the conductive terminal with a probe to measure an electrical parameter of the capacitor structure, wherein the electrical parameter corresponds to a humidity permeability at the heterogeneous interface. A semiconductor structure thereof is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.