Patent · US Active

Device for compound semiconductor Fin structure

US10937896B2 · kind B2 · utility

1Cited by

20References

19Claims

0Family size

Assignees

Semiconductor Manufacturing International (Shanghai) Corporation · CN
Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

Haiyang Zhang · Shanghai, CN
Yan Wang · Shanghai, CN

Key dates

Filing date	Jun 20, 2019
Grant date	Mar 2, 2021
Priority date	—
Expiry date	Jun 20, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/215
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate and a fin structure. The fin structure includes a first semiconductor layer on the substrate, and a stack of one or more semiconductor layer structures. Each of the semiconductor layer structures includes a first insulator layer and a second semiconductor layer on the first insulator layer, the first and second semiconductor layers having a same semiconductor compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.