Etch stop member in buried insulator of SOI substrate to reduce contact edge punch through
US10943814B1 · kind B1 · utility
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2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Aug 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method forms a trench isolation opening extending into an SOI substrate, and forms an etch stop member in a portion of the insulator layer abutting a side of the trench isolation opening. The etch stop member has a higher etch selectivity than the insulator layer of the SOI substrate. A trench isolation is formed in the trench isolation opening. A contact is formed to a portion of the semiconductor layer of the SOI substrate. The etch stop member is structured to prevent contact punch through to the base substrate of the SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.