Structure for radiofrequency applications
US10943815B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 6, 2017 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms-cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms-cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.