Measurement of overlay error using device inspection system
US10943838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2018 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Aug 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.