Semiconductor device and method for manufacturing the same
US10943852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Mar 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.