Patent · US Active

Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication

US10943950B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Daniel G. Ouellette · Portland, US
Christopher J. Wiegand · Portland, US
Justin S. Brockman · Portland, US
Tofizur Rahman · Portland, US
Oleg Golonzka · Beaverton, US
Angeline Smith · Hillsboro, US
Andrew L. Smith · Needham, US
James Pellegren · Portland, US
Aaron Littlejohn · Portland, US
Michael Robinson · Beaverton, US
Huiying Liu · Qinhuangdao City, CN

Key dates

Filing date	Mar 27, 2019
Grant date	Mar 9, 2021
Priority date	—
Expiry date	Mar 27, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.