Daniel G. Ouellette
15Patents
1h-index
47Co-inventors
46Inventor score
Filing activity: Mar 30, 2016 → Jun 25, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11063088B2 | Magnetic memory devices and methods of fabrication | Electricity | 2 | Active |
| US10868233B2 | Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures | Electricity | 1 | Active |
| US11616192B2 | Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication | Electricity | 0 | Active |
| US10804460B2 | Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction | Electricity | 0 | Active |
| US11770979B2 | Conductive alloy layer in magnetic memory devices and methods of fabrication | Electricity | 0 | Active |
| US10770651B2 | Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same | Electricity | 0 | Active |
| US10943950B2 | Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication | Electricity | 0 | Active |
| US11031545B2 | High stability free layer for perpendicular spin torque transfer memory | Electricity | 0 | Active |
| US11404630B2 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same | Physics | 0 | Active |
| US11489112B2 | Resistive random access memory device and methods of fabrication | Electricity | 0 | Active |
| US11411173B2 | Perpendicular spin transfer torque devices with improved retention and thermal stability | Electricity | 0 | Active |
| US12364002B2 | Integrated circuit structures having metal gates with tapered plugs | Electricity | 0 | Active |
| US11380838B2 | Magnetic memory devices with layered electrodes and methods of fabrication | Electricity | 0 | Active |
| US12051698B2 | Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer | Electricity | 0 | Active |
| US11737368B2 | Magnetic memory devices and methods of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.