Threshold switch for memory
US10943952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Jun 10, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The switching device includes three terminals including an inner surface, an oxide layer on the inner surface of the third terminal, and a chalcogenide pillar extending through the oxide layer and the third terminal, the pillar being in electrical communication with the first terminal and the second terminal, wherein the voltage difference between the first terminal and the second terminal changes the channel from a first state to a second state when a threshold voltage between the first terminal and the second terminal is exceeded, the threshold voltage being dependent on temperature. The third terminal is resistive and receives a control signal to apply heat to the pillar and modulate the threshold voltage. The switching device can be used to select the memory stack through the bitline and provide a nearly limitless current based on the threshold switching conduction providing avalanche current conduction through the switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.