Semiconductor device
US10943981B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Jan 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.