Silicon on insulator semiconductor device with mixed doped regions
US10944007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Sep 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor substrate having a first semiconductor material layer separated from a second semiconductor material layer by an insulating layer. A source region and a drain region are disposed in the first semiconductor material layer and spaced apart. A gate electrode is disposed over the first semiconductor material layer between the source region and the drain region. A first doped region having a first doping type is disposed in the second semiconductor material layer, where the gate electrode directly overlies the first doped region. A second doped region having a second doping type different than the first doping type is disposed in the second semiconductor material layer, where the second doped region extends beneath the first doped region and contacts opposing sides of the first doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.