Semiconductor device
US10944015B2 · kind B2 · utility
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0References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Jan 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.