Dielectric layer, interconnection structure using the same, and manufacturing method thereof
US10950426B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Jan 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.