Che-Lun Chang
18Patents
3h-index
30Co-inventors
52Inventor score
Filing activity: Jan 16, 2017 → Jun 13, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD816018S1 | Tire tread | General | 34 | Active |
| USD811314S1 | Tire tread | General | 11 | Active |
| US11437245B2 | Germanium hump reduction | Electricity | 3 | Active |
| US11935781B2 | Integrated circuit structure with backside dielectric layer having air gap | Electricity | 2 | Active |
| US11450559B2 | Integrated circuit structure with backside dielectric layer having air gap | Electricity | 2 | Active |
| US11417767B2 | Semiconductor devices including backside vias and methods of forming the same | Electricity | 2 | Active |
| US12040407B2 | Semiconductor devices including backside vias and methods of forming the same | Electricity | 1 | Active |
| US11316030B2 | Fin field-effect transistor device and method | Electricity | 1 | Active |
| US12308287B2 | Integrated circuit structure with backside dielectric layer having air gap | Electricity | 0 | Active |
| US12014919B2 | Dielectric layer, interconnection structure using the same, and manufacturing method thereof | Electricity | 0 | Active |
| US10950426B2 | Dielectric layer, interconnection structure using the same, and manufacturing method thereof | Electricity | 0 | Active |
| US11854819B2 | Germanium hump reduction | Electricity | 0 | Active |
| US12310057B2 | Semiconductor devices including backside vias and methods of forming the same | Electricity | 0 | Active |
| US12255102B2 | Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration | Electricity | 0 | Active |
| US11616133B2 | Fin field-effect transistor device and method | Electricity | 0 | Active |
| US12131911B2 | CMP process and methods thereof | Electricity | 0 | Active |
| US11387109B1 | CMP process and methods thereof | Electricity | 0 | Active |
| US11862709B2 | Inner spacer structure and methods of forming such | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.