Method of depositing thin film and method of manufacturing semiconductor device
US10950432B2 · kind B2 · utility
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Key dates
| Filing date | Jun 9, 2020 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Jun 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02208
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.