Method for forming patterns
US10950443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Oct 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming patterns includes forming an etch barrier stack where a first sacrificial material, first mask lines, a second sacrificial material and second mask lines intersecting with the first mask lines are sequentially disposed on an etch target material, etching the second an first sacrificial materials using the second and first mask lines as etch masks, to form island-shaped sacrificial openings isolated from one another in the first sacrificial material, forming island-shaped sacrificial pillars to fill the island-shaped sacrificial openings, etching the first mask lines to form island-shaped masks at intersections between the first mask lines and the second mask lines, and etching the first sacrificial material using the island-shaped masks and the island-shaped sacrificial pillars as etch masks, to form a sacrificial barrier including island-shaped openings isolated from one another to expose the etch target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.