Current source using emitter region as base region isolation structure
US10950601B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Jun 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A current source includes a substrate, a base region of a first doping type formed in the substrate, an emitter region of a second doping type formed in the substrate and surrounding the base region, a first collector region of the second doping type formed in the base region, and at least one second collector region of the second doping type formed in the base region, wherein the emitter region includes a deep-well portion and an extending portion, the deep-well portion situated beneath the base region, the extending portion laterally surrounding the base region, the extending portion joined at its bottom to the deep-well portion, the extending portion being flush at its top with a top surface of the substrate. A method of forming the current source is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.