Silicon carbide semiconductor component

US10950696B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Basler · Riemerling, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Feb 21, 2019
• Grant date: Mar 16, 2021
• Expiry date: Mar 7, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor component includes a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type. A zone of the first conductivity type is formed in a vertical direction between a semiconductor region of a second conductivity type and the drift zone. The zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction.