Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip

US10950752B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Thomas Lehnhardt · Regensburg, DE
• Jürgen Off · Regensburg, DE
• Lise Lahourcade · Regensburg, DE
• Philipp Drechsel · Regensburg, DE

Key dates

• Filing date: Feb 22, 2017
• Grant date: Mar 16, 2021
• Expiry date: Jan 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/821

Abstract

A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.