Thermal active delay fluorescent material, method for manufacturing same, and organic light-emitting diode device
US10954245B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 6, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Aug 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/302
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A thermal active delay fluorescent material includes a structural formula in formula 1: The application adopts a strong electron-withdrawing group of a large conjugate plane as an electron acceptor, and combines an electron acceptor with a strong electron donor to achieve a deep red light thermal active delay fluorescent material with a typical TADF characteristics and a low energy level. The thermal active delay fluorescent material of the application is a deep red light TADF material having a lower single triplet energy level difference, an ultrafast reverse intersystem crossing speed and a high luminous efficiency, and when it is used as a luminescent material for an organic light-emitting diode device, it can promote a luminous efficiency of the organic light-emitting diode device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.