Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide
US10954411B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | May 16, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.