Methods for modeling the impurity concentration of a single crystal silicon ingot
US10954606B2 · kind B2 · utility
2Cited by
7References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Sep 8, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.