Patent · US Active

Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices

US10955599B2 · kind B2 · utility

1Cited by

11References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Pindl · Ergoldsbach, DE
Christoph Glacer · Munich, DE

Key dates

Filing date	Mar 31, 2017
Grant date	Mar 23, 2021
Priority date	—
Expiry date	Jun 1, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH05B2203/032
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.