Method of determining a parameter of a pattern transfer process, device manufacturing method
US10955744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2018 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jul 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70141
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.