Etching solution, etching method, and method for manufacturing an electronic component
US10957553B2 · kind B2 · utility
0Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pKa1. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pKa1. A mass ratio M1/M2 of mass M1 of the phosphoric acid to mass M2 of the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKa1 is within a range of 0.82 or more and 725 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.