Pressure sintering procedure in which power semiconductor components with a substrate are connected to each other via a sintered connection

US10957560B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Alexander Wehner · Nuremberg, DE
• Juergen Steger · Hiltpoltstein, DE

Key dates

• Filing date: Mar 26, 2019
• Grant date: Mar 23, 2021
• Expiry date: Jul 1, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/8384
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention provides a pressure sintering method including: a) providing a sintered component arrangement with a workpiece carrier having recesses, with a substrate resting on a main surface of the workpiece carrier, wherein a sintering material to be sintered is arranged between the power semiconductor components and the substrate, a first power semiconductor component and a first region of the substrate arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a first recess of the workpiece carrier, and a second power semiconductor component and a second region of the substrate are arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a second recess of the workpiece carrier and a step of b) pressurizing the power semiconductor components and applying a temperature treatment.