Single diffusion break device for FDSOI

US10957578B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Wei Hong · Clifton Park, US
• Hui Zang · Guilderland, US
• Hsien-Ching Lo · Clifton Park, US
• Zhenyu Hu · Leonberg, DE
• Liu Jiang · Clifton Park, US

Key dates

• Filing date: Sep 28, 2018
• Grant date: Mar 23, 2021
• Expiry date: Sep 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion break device and methods of manufacture. The structure includes a single diffusion break structure with a fill material between sidewall spacers of the single diffusion break structure and a channel oxidation below the fill material.