Liu Jiang
11Patents
1h-index
26Co-inventors
46Inventor score
Filing activity: Aug 28, 2014 → Aug 31, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD758990S1 | Headphones | General | 23 | Active |
| US11018221B2 | Air gap regions of a semiconductor device | Electricity | 1 | Active |
| US10825897B2 | Formation of enhanced faceted raised source/drain EPI material for transistor devices | Electricity | 1 | Active |
| US10756184B2 | Faceted epitaxial source/drain regions | Electricity | 1 | Active |
| US10777642B2 | Formation of enhanced faceted raised source/drain epi material for transistor devices | Electricity | 1 | Active |
| US10797049B2 | FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same | Electricity | 0 | Active |
| US10546775B1 | Field-effect transistors with improved dielectric gap fill | Electricity | 0 | Active |
| US11899376B1 | Methods for forming alignment marks | Electricity | 0 | Active |
| US11164794B2 | Semiconductor structures in a wide gate pitch region of semiconductor devices | Electricity | 0 | Active |
| US11171036B2 | Preventing dielectric void over trench isolation region | Electricity | 0 | Active |
| US10957578B2 | Single diffusion break device for FDSOI | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.