Method of processing a wafer
US10957593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Dec 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a wafer includes a grinding step of grinding a wafer that has first insulating films covering via electrodes, from a reverse side thereof, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by way of etching, a distorted layer forming step of forming a distorted layer on the reverse side of the wafer, an insulating film forming step of forming a second insulating film on the reverse side of the wafer, and an electrode forming step of removing the first insulating films and the second insulating film from the regions where they overlap the via electrodes, and forming reverse-side electrodes connected to the via electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.