Semiconductor device including an integrated resistor and method of producing thereof

US10957686B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Ahlers · Hersbruck, DE
• Markus Zundel · Egmating, DE
• Peter Brandl · Linz, AT
• Kurt Matoy · Strau, AT
• Thomas Ostermann · Velden am Wörther See, AT

Key dates

• Filing date: Jan 16, 2020
• Grant date: Mar 23, 2021
• Expiry date: Jan 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area, and a pn junction diode electrically connected in series with the resistor. A method of producing the semiconductor device is also described.