CMOS image sensor structure with crosstalk improvement

US10957728B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Chang Chang · Tainan, TW
• Chun-Yuan Hsu · Taipei, TW
• Szu-Hung Yang · Tainan, TW

Key dates

• Filing date: Nov 30, 2018
• Grant date: Mar 23, 2021
• Expiry date: Nov 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.