Patent · US Active

Semiconductor device with latchup immunity

US10957792B2 · kind B2 · utility

0Cited by

1References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Chi Dong Nguyen · Munich, DE
Andreas Rupp · Erbach, DE

Key dates

Filing date	Aug 14, 2018
Grant date	Mar 23, 2021
Priority date	—
Expiry date	Aug 25, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region. Additional semiconductor device embodiments and methods of manufacture are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.