Bidirectional Zener diode and method for manufacturing bidirectional Zener diode
US10957803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jul 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bidirectional Zener diode includes a substrate, a first conductivity type base region formed at a front surface portion of the substrate, a second conductivity type first impurity region formed at the base region, a second conductivity type second impurity region formed at the base region away from the first impurity region, an insulating layer formed on a front surface of the substrate, a first electrode film formed on the insulating layer and electrically connected to the first impurity region, and a second electrode film formed on the insulating layer and electrically connected to the second impurity region, and a first region formed on the insulating layer, the first region being sandwiched between the first electrode film and the second electrode film, and the first region including a portion having an aspect ratio of 1 or larger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.