High voltage monolithic LED chip with improved reliability
US10957830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.