Patent · US Active

Wafer drying system

US10962285B2 · kind B2 · utility

2Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 13, 2018
Grant dateMar 30, 2021
Priority date
Expiry dateSep 30, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67253
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

A wafer drying method to detect airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process is provided. For example, the method includes dispensing in a wafer drying station a drying gas over one or more wafers; collecting the drying gas from an exhaust of the wafer drying station; determining the concentration of contaminants in the drying gas; re-dispensing the drying gas over the one or more wafers if the concentration of contaminants is higher than a baseline value; and transferring the one or more wafers out of the wafer drying station if the concentration is equal to or less than the baseline value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.