Patent · US Active

3D NAND flash memory device and integration method thereof

US10963191B1 · kind B1 · utility

1Cited by

1References

14Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Yi Ding Gu · Pleasanton, US
Chunyuan Hou · Shanghai, CN
Yueping Li · 红钢城街道, CN
Jiawei Chen · Ningbo City, CN

Key dates

Filing date	Jun 17, 2020
Grant date	Mar 30, 2021
Priority date	—
Expiry date	Jun 17, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/27
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integration method for a 3D NAND flash memory device includes disposing a plurality of 3D triple-level cell (TLC) NAND flash memories on a CMOS die; disposing at least a NOR Flash memory on the CMOS die of the 3D NAND flash memory device; and connecting the at least a NOR Flash memory to an Open NAND Flash Interface (ONFI) of the 3D NAND flash memory device; wherein the at least a NOR Flash memory is disposed on an unused area of the CMOS die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.