Processes for reducing leakage and improving adhesion
US10964591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Jun 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/92244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a metal seed layer on a dielectric layer, and forming a patterned mask over the metal seed layer. An opening in the patterned mask is over a first portion of the dielectric layer, and the patterned mask overlaps a second portion of the dielectric layer. The method further includes plating a metal region in the opening, removing the patterned mask to expose portions of the metal seed layer, etching the exposed portions of the metal seed layer, performing a plasma treatment on a surface of the second portion of the dielectric layer, and performing an etching process on the surface of the second portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.