Semiconductor device having silicides and methods of manufacturing the same
US10964791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Jul 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.