Patent · US Active

Micro light emitting devices

US10964845B2 · kind B2 · utility

15Cited by
21References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 27, 2019
Grant dateMar 30, 2021
Priority date
Expiry dateSep 30, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/853

Abstract

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.