Semiconductor light emitting device
US10964846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.