Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices
US10964887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Oct 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.