Extreme ultraviolet lithography apparatus
US10969702B2 · kind B2 · utility
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6References
16Claims
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Key dates
| Filing date | Dec 12, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Dec 12, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70958
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An EUV lithography apparatus may include a light source, an EUV mask and a carbon-based optical filter. The light source may generate an EUV light. The EUV mask may be configured to apply the EUV light to a photoresist film on a substrate. The carbon-based optical filter may filter a light having an OoB wavelength in the EUV light. Thus, the EUV light may not include the light having the OoB wavelength to decrease an error of a photoresist pattern formed using the EUV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.