Semiconductor device and method of fabricating the same
US10971397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Sep 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the following steps. A substrate is provided. The substrate includes a pixel region having a first conductive region and a logic region having a second conductive region. A dielectric layer is formed on the substrate to cover the first conductive region. A first contact opening is formed in the dielectric layer to expose the first conductive region. A doped polysilicon layer is sequentially formed in the first contact opening. A first metal silicide layer is formed on the doped polysilicon layer. A second contact opening is formed in the dielectric layer to expose the second conductive region. A barrier layer and a metal layer are respectively formed in the first contact opening and the second contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.