Semiconductor device, substrate for semiconductor device and method of manufacturing the semiconductor device
US10971400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Sep 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device includes a device layer having a semiconductor element and a wiring layer, a first structure, a second structure at an outer periphery of the first structure and having a thickness smaller than that of the first structure, and a conductive layer that covers the first structure and the second structure. The first structure comprises a first substrate having the device layer formed on a first surface thereof and a through hole formed through a second surface thereof that is opposite to the first surface to reach the device layer, and an inner portion of a second substrate facing the first surface and bonded to the first surface by a first adhesive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.